Morphology and X-ray diffraction peak widths of aluminum nitride single crystals prepared by the sublimation method

• Published in: Japanese Journal of Applied Physics Vol. 36; no. 8B; pp. L1062 - L1064
• Main Authors: TANAKA, M, NAKAHATA, S, SOGABE, K, NAKATA, H, TOBIOKA, M
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 15.08.1997
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Halides, chalcogenides and analogous compounds of group vb; Inorganic compounds; Physics; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Inorganic compounds; Aluminium nitrides; Rocking curve; Crystal growth from vapors; XRD; Experimental study; Crystal structure
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.36.l1062

AlN single crystal is one of the promising materials for substrates of GaN-based laser diodes. We prepared aluminum nitride single crystals by the sublimation method and characterized them. The crystals are transparent and slightly yellow. Some crystals are needle-shaped with a hexagonal cross section, diameter of 0.5 mm and length of 3 mm, grown parallel to |001|. Other crystals are plate-shaped with a maximum width of 3 mm, 5 mm length and 0.5 mm thickness, grown with a large (001) face. Also, other crystals are needle-shaped with a rectangular cross section, width of 1 mm, 7 mm length and 0.3 mm thickness, grown with a large (101) face. Their widths of X-ray rocking curves is about 39 arcsec, with a full width at half-maximum, 203 arcsec and 12 arcsec, respectively. The orientation of AlN single crystal axis is sufficient for use in substrates for GaN-based diodes.