Direct writing of silver nanowire electrodes via dragging mode electrohydrodynamic jet printing for organic thin film transistors

AgNWs-based electrodes were directly patterned using an electrohydrodynamic (EHD) jet printing technique. We investigated EHD jet printing for AgNWs ink in detail, and established the optimum printing conditions in dragging mode for controlling the dimensions and conductivity of the AgNWs network, a...

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Bibliographic Details
Published inOrganic electronics Vol. 62; pp. 357 - 365
Main Authors Li, Xinlin, Lee, Gyu Sung, Park, So Hyun, Kong, Hoyoul, An, Tae Kyu, Kim, Se Hyun
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.2018
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Summary:AgNWs-based electrodes were directly patterned using an electrohydrodynamic (EHD) jet printing technique. We investigated EHD jet printing for AgNWs ink in detail, and established the optimum printing conditions in dragging mode for controlling the dimensions and conductivity of the AgNWs network, although the cone-jet printing mode has been the most conventionally used mode for EHD jet printing. The printed AgNWs were used as source/drain (S/D) electrodes of an organic thin film transistor (OTFT) with bottom-contact geometry, and yielded an average field-effect mobility (μFET), threshold voltage (Vth) and on/off current ratio (Ion/Ioff) of 0.48 cm2/V, −11.2 V, and ∼106, respectively. In addition, we investigate the interface morphologies between pentacene and AgNWs S/D electrode to figure out charge carrier injection property of AgNWs S/D electrode, by comparing vacuum-deposited Au ones. [Display omitted] •We investigated electrohydrodynamic (EHD) jet printing for silver nanowires (AgNW) ink.•The optimum printing mode can control the dimensions and conductivity of AgNW network.•EHD-jet-printed AgNWs were used as the electrodes of pentacene OTFTs.•AgNW-based OTFTs showed a μFET of 0.48 cm2/V, 100 times that of gold-based OTFTs.
ISSN:1566-1199
1878-5530
DOI:10.1016/j.orgel.2018.07.027