Gate Orientation Dependence of InGaAs/AlGaAs High Electron Mobility Transistors Formed by Wet Recess Etching

The gate orientation dependence of InGaAs/AlGaAs high electron mobility transistors (HEMTs) formed by the wet-chemical recess etching has been evaluated. The short channel effect strongly depends on the gate orientation and is significant in the order of [011], [001] and [011] oriented devices. Such...

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Published inJapanese Journal of Applied Physics Vol. 39; no. 9R; pp. 5052 - 5056
Main Authors Ohshima, Tomoyuki, Yoshida, Masaaki, Shigemasa, Ryoji, Tsunotani, Masanori, Kimura, Tamotsu
Format Journal Article
LanguageEnglish
Published 2000
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Summary:The gate orientation dependence of InGaAs/AlGaAs high electron mobility transistors (HEMTs) formed by the wet-chemical recess etching has been evaluated. The short channel effect strongly depends on the gate orientation and is significant in the order of [011], [001] and [011] oriented devices. Such orientation dependence results from a difference of the side-etching lengths, which are 0.01 µm, 0.03 µm and 0.06 µm for the [011], [001] and [011] oriented devices, respectively. The other characteristics of HEMTs such BV gd , gm and f T also depend on the gate orientation because of a difference of the recessed shape.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.5052