Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H–SiC and Si

Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H–SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature fo...

Full description

Saved in:
Bibliographic Details
Published inSolid-state electronics Vol. 44; no. 3; pp. 471 - 476
Main Authors Persson, C., Lindefelt, U., Sernelius, B.E.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.03.2000
Subjects
Band-gap shifts
devices
doped semiconductors
Electronic structure
Electron–hole plasma
Exchange and correlation interactions
gap
polytypes
silicon
simulation
TECHNOLOGY
TEKNIKVETENSKAP
Electronic structure
Electron–hole plasma
Exchange and correlation interactions
Band-gap shifts
Online AccessGet full text

Cover

More Information
Summary:Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H–SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature formalism within the random phase approximation. Electron–electron, hole–hole, electron–hole, electron–optical phonon and hole–optical phonon interactions have been taken into account. The calculations are based on band structure data from a relativistic, full-potential band structure calculation.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1101
1879-2405
1879-2405
DOI:10.1016/S0038-1101(99)00180-X