Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors
The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is m...
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Published in | IEEE transactions on nuclear science Vol. 49; no. 6; pp. 3213 - 3216 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.12.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2002.805399 |