Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is m...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 49; no. 6; pp. 3213 - 3216
Main Authors Xinwen Hu, Choi, B.K., Barnaby, H.J., Fleetwood, D.M., Schrimpf, R.D., Galloway, K.F., Weller, R.A., McDonald, K., Mishra, U.K., Dettmer, R.W.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum gallium arsenides
Annealing
Degradation
Devices
Doping
Energy loss
Gallium arsenide
Gallium arsenides
Heterojunction bipolar transistors
Laboratories
Proton irradiation
Protons
Semiconductor devices
Space technology
Temperature sensors
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Summary:The effects of 1.8-MeV and 105-MeV proton irradiation on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are reported. For 1.8-MeV protons, the degradation of the transistors is caused by an increase in the base current and a large decrease in the collector current. The device degradation is much less after irradiation with 105-MeV protons, because of lower nonionizing energy loss (NIEL) in the sensitive region of the device. There is no improvement in device performance after three months of room temperature annealing.
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.805399