MOCVD layer growth of ZnO using DMZn and tertiary butanol

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Bibliographic Details
Published inSemiconductor science and technology Vol. 13; no. 7; pp. 788 - 791
Main Authors Hahn, B, Heindel, G, Pschorr-Schoberer, E, Gebhardt, W
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.1998
Institute of Physics
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Other inorganic semiconductors
Physics
Inorganic compounds
Epitaxial layers
Transport properties
n-type conductors
Operating mode
Polycrystals
Binary compounds
Hall effect
Experimental study
MOCVD
Precursor
Transition metal compounds
Preparation
Zinc oxide
SEM
Transparent material
Electric conductivity
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/13/7/022