New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy

GaN y As 1- x - y Bi x epilayers were grown on GaAs by molecular beam epitaxy for the first time. Multilayered samples consisting of GaAs 1- x Bi x , GaN y As 1- y and GaN y As 1- x - y Bi x showed distinct X-ray diffraction (XRD) peaks ascribed to each layer. The GaBi molar fraction, x , estimated...

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Published inJapanese Journal of Applied Physics Vol. 43; no. 7A; pp. L845 - L847
Main Authors Yoshimoto, Masahiro, Huang, Wei, Takehara, Yuji, Saraie, Junji, Chayahara, Akiyoshi, Horino, Yuji, Oe, Kunishige
Format Journal Article
LanguageEnglish
Published 01.07.2004
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Summary:GaN y As 1- x - y Bi x epilayers were grown on GaAs by molecular beam epitaxy for the first time. Multilayered samples consisting of GaAs 1- x Bi x , GaN y As 1- y and GaN y As 1- x - y Bi x showed distinct X-ray diffraction (XRD) peaks ascribed to each layer. The GaBi molar fraction, x , estimated by the combination of Rutherford backscattering spectroscopy and XRD was controlled in a range up to 4.0%. The GaN molar fraction estimated from the angular spacing of the XRD peak between GaAs 1- x Bi x and GaN y As 1- x - y Bi x increased up to 8.0% with increasing supply of activated nitrogen generated in rf plasma.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.L845