Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

This paper presents a reliability study of a 1.2kV SiC MOSFET under HTRB (High Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon emission (SPE) techniques. The electrical characteristics analysis suggests failures related to the PN junction degradation. This hypothe...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 76-77; pp. 243 - 248
Main Authors Moultif, N., Joubert, E., Masmoudi, M., Latry, O.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2017
Elsevier
Subjects
Condensed Matter
Materials Science
Physics
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Summary:This paper presents a reliability study of a 1.2kV SiC MOSFET under HTRB (High Temperature Reverse Bias stress by the photon emission (PE) and the spectral photon emission (SPE) techniques. The electrical characteristics analysis suggests failures related to the PN junction degradation. This hypothesis is confirmed by the PE and SPE techniques. •This paper presents a failure analysis study on a HTRB stressed SiC MOSFET, using PE and SPE techniques.•Following the HTRB stress, degradation has been noticed on Idss, Vth, Cds, Cgs capacitance in the N-well side, and Rds on.•The electrical parameters degradation suggests a degradation of the PN junction that could cause a charge (e-) migration.•The hypotheses concluded from the electrical characterizations are proved by PE and SPE analysis.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2017.07.013