Effect of bias addition on the gap-filling properties of fluorinated amorphous carbon thin films grown by helicon wave plasma-enhanced chemical vapor deposition

• Published in: Japanese Journal of Applied Physics Vol. 35; no. 10B; pp. L1348 - L1350
• Main Authors: ENDO, K, TATSUMI, T, MATSUBARA, Y
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 15.10.1996
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Amorphous material; Plasma; Microelectronic fabrication; Helicon wave; Dielectric materials; Fluorine addition; Experimental study; Carbon; Chemical vapor deposition; Thin film

Gap-filling properties of fluorinated amorphous carbon thin films ( a -C:F) for low-dielectric-constant interlayer dielectrics were investigated. The a -C:F films were grown by plasma-enhanced chemical vapor deposition from C 4 F 8 . It is demonstrated that by adding 400 kHz bias power to the substr...