Effect of bias addition on the gap-filling properties of fluorinated amorphous carbon thin films grown by helicon wave plasma-enhanced chemical vapor deposition

Gap-filling properties of fluorinated amorphous carbon thin films ( a -C:F) for low-dielectric-constant interlayer dielectrics were investigated. The a -C:F films were grown by plasma-enhanced chemical vapor deposition from C 4 F 8 . It is demonstrated that by adding 400 kHz bias power to the substr...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 35; no. 10B; pp. L1348 - L1350
Main Authors ENDO, K, TATSUMI, T, MATSUBARA, Y
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 15.10.1996
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Amorphous material
Plasma
Microelectronic fabrication
Helicon wave
Dielectric materials
Fluorine addition
Experimental study
Carbon
Chemical vapor deposition
Thin film
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Summary:Gap-filling properties of fluorinated amorphous carbon thin films ( a -C:F) for low-dielectric-constant interlayer dielectrics were investigated. The a -C:F films were grown by plasma-enhanced chemical vapor deposition from C 4 F 8 . It is demonstrated that by adding 400 kHz bias power to the substrate, the films could fill the gaps without leaving voids. Without bias application, the gap space was not filled. The bias power required to achieve complete gap filling was 30 W. The dielectric constant was 2.5 for the film with bias application.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.L1348