Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode

Authors report on the differential absorption spectra induced by a continuous-wave (cw) laser beam at 405 nm and by a femtosecond pulse for In0.10Ga0.90N multiple quantum wells and epilayers. For a thick InGaN epilayer, even low power cw pumping can cause sizable absorption changes that are observed...

Full description

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 43; no. No. 3A; pp. L340 - L342
Main Authors Nomura, Masahiro, Arita, Munetaka, Ashihara, Satoshi, Nishioka, Masao, Arakawa, Yasuhiko, Shimura, Tsutomu, Kuroda, Kazuo
Format Journal Article
LanguageEnglish
Published 01.03.2004
Online AccessGet full text

Cover

More Information
Summary:Authors report on the differential absorption spectra induced by a continuous-wave (cw) laser beam at 405 nm and by a femtosecond pulse for In0.10Ga0.90N multiple quantum wells and epilayers. For a thick InGaN epilayer, even low power cw pumping can cause sizable absorption changes that are observed at 2 ns after high-energy pulse excitation. However, the absorption changes are very small for a multiple quantum well structure. Photogenerated carriers are trapped in deep levels and screen piezoelectric fields. The screening effect leads to absorption spectrum changes around the absorption edge. The piezoelectric fields are screened effectively and larger absorption changes are observed in thicker epilayers. 11 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
DOI:10.1143/JJAP.43.L340