Electrical properties of PMMA ion-implanted with low-energy Si+ beam

The electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 − 1017 cm−2. The carb...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 207; no. 1; p. 012022
Main Authors Hadjichristov, G B, Gueorguiev, V K, Ivanov, Tz E, Marinov, Y G, Ivanov, V G, Faulques, E
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.01.2010
Subjects
Electrical properties
Fluence
Ion implantation
Physics
Polymethyl methacrylate
Silicon
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Summary:The electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 − 1017 cm−2. The carbonaceous subsurface region of the Si+-implanted PMMA displays a significant DC conductivity and a sizable field effect that can be used for electronic applications.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/207/1/012022