InAsSb thick epilayers applied to long wavelength photoconductors

• Published in: International journal of minerals, metallurgy and materials Vol. 20; no. 4; pp. 393 - 396
• Main Authors: Gao, Yu-zhu, Gong, Xiu-ying, Wu, Guang-hui, Feng, Yan-bin, Makino, Takamitsu, Kan, Hirofumi, Koyama, Tadanobu, Hayakawa, Yasuhiro
• Format: Journal Article
• Language: English
• Published: Springer Berlin Heidelberg University of Science and Technology Beijing 01.04.2013; Springer Nature B.V; School of Electronics and Information Engineering, Tongji University, Shanghai 201804, China%Huaxing Infrared Device Co., Xi'an 712099, China%Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan%Research Institute of Electronics, Shizuoka University, Shizuoka 432-8011, Japan
• Subjects: Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Composites; Corrosion and Coatings; Detectors; Epitaxial growth; Epitaxy; Germanium; Glass; InAsSb; Indium arsenides; Lenses; Materials Science; Melts; Metallic Materials; Natural Materials; Photoconductors; Room temperature; Substrates; Surfaces and Interfaces; Thin Films; Tribology; Wavelengths; 光导鼓; 外延层; 外延生长; 应用; 扫描电子显微镜; 锑化铟探测器; 长波长; semiconducting indium compounds; photoconductors; long wavelength; detectivity; thick epilayers
• ISSN: 1674-4799; 1869-103X
• DOI: 10.1007/s12613-013-0741-4

InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.