Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT
An organic field-effect transistor was fabricated based on a thin film of 1,4-bis-(2-naphthalen-2-ylvinyl)benzene (BNDV). The organic semiconductor was deposited via thermal evaporation on a chemically modified silicon dioxide surface. The thermal, optical, electronic, and surface properties of the...
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Published in | Journal of electronic materials Vol. 38; no. 9; pp. 2000 - 2005 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Boston
Springer US
01.09.2009
Springer Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | An organic field-effect transistor was fabricated based on a thin film of 1,4-bis-(2-naphthalen-2-ylvinyl)benzene (BNDV). The organic semiconductor was deposited via thermal evaporation on a chemically modified silicon dioxide surface. The thermal, optical, electronic, and surface properties of the BNDV compound were investigated by thermogravimetric analysis, differential scanning calorimetry, ultraviolet–visible (UV–vis) absorption, photoluminescence spectroscopies, cyclic voltammetry, x-ray diffraction, and atomic force microscopy. The BNDV had good oxidation stability and exhibited a field-effect performance with a mobility of 0.062 cm
2
/V s, a subthreshold slope of 0.4 V, and an on/off ratio of 2.45 × 10
5
. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-009-0830-3 |