Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

• Published in: Scientific reports Vol. 6; no. 1; p. 36775
• Main Authors: Kim, Jae-Keun, Cho, Kyungjune, Kim, Tae-Young, Pak, Jinsu, Jang, Jingon, Song, Younggul, Kim, Youngrok, Choi, Barbara Yuri, Chung, Seungjun, Hong, Woong-Ki, Lee, Takhee
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 10.11.2016; Nature Publishing Group
• Subjects: 639/766/1130; 639/925/927/1007; Conduction; Electrodes; Graphene; Humanities and Social Sciences; Interfaces; Low temperature; Molybdenum; multidisciplinary; Polymethyl methacrylate; Science; Semiconductors; Temperature effects
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/srep36775

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.