Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite direc...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 48; no. 9; pp. 2002 - 2008
Main Authors Sung-Min Yoon, Ishiwara, H.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Capacitors
Depolarization
Devices
Ferroelectric materials
Ferroelectric memories
Ferroelectricity
Polarization
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Summary:A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively read-out and their retention time was much longer than that of conventional ferroelectric-gate FET.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.944189