Graphene/AlGaN Schottky barrier photodiodes and its application for array devices

Abstract This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al co...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 61; no. SD; p. SD1013
Main Authors Nakagawa, Yoshinori, Okauchi, Shigeki, Sano, Masahiko, Mukai, Takashi, Ohno, Yasuhide, Nagase, Masao
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.06.2022
Japanese Journal of Applied Physics
Subjects
AlGaN
Arrays
deep ultraviolet
Electromagnetic absorption
Graphene
image sensor
Photodiodes
Schottky barrier
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Summary:Abstract This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al composition ratio. By forming an array of photodiodes, an 8 × 8 pixels ultraviolet image sensor was fabricated.
Bibliography:JJAP-S1102667.R2
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac6132