Graphene/AlGaN Schottky barrier photodiodes and its application for array devices
Abstract This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al co...
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Published in | Japanese Journal of Applied Physics Vol. 61; no. SD; p. SD1013 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
IOP Publishing
01.06.2022
Japanese Journal of Applied Physics |
Subjects | |
Online Access | Get full text |
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Summary: | Abstract
This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light-absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al composition ratio. By forming an array of photodiodes, an 8 × 8 pixels ultraviolet image sensor was fabricated. |
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Bibliography: | JJAP-S1102667.R2 |
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.35848/1347-4065/ac6132 |