Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of th...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 193; no. 1; p. 012084
Main Authors Porte, H P, Turchinovich, D, Cooke, D G, Jepsen, P Uhd
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2009
Subjects
Carrier density
Indium gallium nitrides
Photoluminescence
Physics
Piezoelectricity
Quantum wells
Spectrum analysis
Time measurement
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Summary:Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay of the carrier density. Time-integrated photoluminescence spectra have shown a complete screening of the built-in piezoelectric field at high excitation fluences. We also observe that the terahertz conductivity spectra differs from simple Drude conductivity, describing the response of free carriers, and are well fitted by the Drude-Smith model.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/193/1/012084