Electrical and mechanical properties of vapour grown gallium monotelluride crystals

• Published in: International journal of minerals, metallurgy and materials Vol. 20; no. 10; pp. 967 - 971
• Main Authors: Reshmi, P. M., Kunjomana, A. G., Chandrasekharan, K. A.
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.10.2013; Springer Nature B.V; Crystal Research Centre, Department of Physics, Christ University, Bangalore 560 029, India
• Subjects: Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Composites; Corrosion and Coatings; Crystal growth; Crystals; Diamond pyramid hardness; Electrical resistivity; Gallium; Glass; Materials Science; Mechanical properties; Metallic Materials; Natural Materials; Parameters; Physical properties; Physical vapor deposition; Spherulites; Surfaces and Interfaces; Temperature gradients; Thin Films; Tribology; Work hardening; X ray powder diffraction; X-射线粉末衍射; 加工硬化指数; 晶体; 机械性能; 气相生长; 物理气相沉积; 电气; 镓; whiskers; spherulites; microhardness; physical vapour deposition; electrical conductivity; gallium monotelluride
• ISSN: 1674-4799; 1869-103X
• DOI: 10.1007/s12613-013-0822-4

The physical vapour deposition （PVD） of gallium monotelluride （GaTe） in different crystalline habits was established in the growth ampoule, strongly depending on the temperature gradient. Proper control on the temperatures of source and growth zones in an indigenously fabricated dual zone furnace could yield the crystals in the form of whiskers and spherulites. Optical and electron microscopic images were examined to predict the growth mechanism of morphologies. The structural parameters of the grown spherulites were determined by X-ray powder diffraction （XRD）. The stoichiometric composition of these crystals was confirmed using energy dispersive analysis by X-rays （EDAX）. The type and nature of electrical conductivity were identified by the conventional hot probe and two probe methods, respectively. The mechanical parameters, such as Vickers microhardness, work hardening index, and yield strength, were deduced from microindentation measurements. The results show that the vapour grown p-GaTe crystals exhibit novel physical properties, which make them suitable for device applications.