40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs

• Published in: IEEE journal of solid-state circuits Vol. 34; no. 9; pp. 1246 - 1253
• Main Authors: Miyamoto, Y., Yoneyama, M., Otsuji, T., Yonenaga, K., Shimizu, N.
• Format: Journal Article
• Language: English
• Published: IEEE 01.09.1999
• Subjects: Carriers; Channels; Density; Flattening; HEMTs; High speed optical techniques; Indium phosphide; MODFETs; Optical fiber dispersion; Optical network units; Optical receivers; Photodiodes; Receivers; Time division multiplexing; Upgrading; Wavelength division multiplexing
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/4.782083

This paper presents 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-/spl mu/m-gate-length InP high electron mobility transistor IC's and a scheme for upgrading toward a terabit-per-second capacity system. A 40-Gbit/s, 300-km, in-line transmission experiment and a dispersion-tolerant 40-Gbit/s duobinary transmission experiment are described as 40-Gbit/s single carrier system applications on dispersion-shifted fiber. An ultra-high-speed receiver configuration using a high-output-power photodiode is introduced to realize fully electrical receiver operation beyond 40 Gbit/s. The high-sensitivity operation of the optical receiver (-27.6 dBm@BER=10/sup -9/) is demonstrated at a data bit rate of 50 Gbit/s for the first time using a unitraveling carrier photodiode. A dense wavelength division multiplexing (DWDM) system operating up to terabits per second can be easily realized on a zero-dispersion flattened transmission line using ultra-high speed TDM channels of 40 Gbit/s and beyond. An experiment demonstrates 1.04-Tbit/s DWDM transmission based on 40-Gbit/s TDM channels with high optical spectrum density (0.4 bit/s/Hz) without dispersion compensation.