Large temperature range model for the atmospheric pressure chemical vapor deposition of silicon dioxide films on thermosensitive substrates

• Published in: Chemical engineering research & design Vol. 161; pp. 146 - 158
• Main Authors: Topka, Konstantina Christina, Chliavoras, George Alexander, Senocq, François, Vergnes, Hugues, Samelor, Diane, Sadowski, Daniel, Vahlas, Constantin, Caussat, Brigitte
• Format: Journal Article
• Language: English
• Published: Rugby Elsevier B.V 01.09.2020; Elsevier Science Ltd; Elsevier
• Subjects: Atmospheric pressure; Chemical engineering; Chemical Sciences; Chemical vapor deposition; Computational Fluid Dynamics; Energy consumption; Energy harvesting; Fluid dynamics; Kinetic model; Kinetics; Material chemistry; Ozone; Silica; Silicon dioxide; Temperature; TEOS; Kinetic model; Ozone; TEOS; Computational Fluid Dynamics; Chemical vapor deposition; Silicon dioxide
• ISSN: 0263-8762; 1744-3563
• DOI: 10.1016/j.cherd.2020.07.007

•New apparent kinetic model for the CVD of SiO2 films in the range 150−520 °C.•Excellent fit between CFD process simulation and thorough experimental analysis.•First time definition of temperature-dependent surface reaction from TEOS.•Original solutions proposed to uniformly coat complex and/or large substrates. Coating complex surfaces by functional amorphous silica films for new applications including energy harvesting and health depends on the operating range and robustness of their deposition process. In this paper, we propose a new kinetic model for the atmospheric pressure chemical vapor deposition of SiO2 films from TEOS/O2/O3 valid in the 150−520 °C temperature range, thus allowing for treating thermally sensitive substrates. For this, we revisit reported chemical schemes in Computational Fluid Dynamics simulations considering original experimental data on the deposition rate of SiO2 films from a hot-wall reactor. The new model takes into account for the first time a thermal dependency of the direct formation of SiO2 from TEOS and O3 and yields excellent agreement in both shape and value between experimental and calculated local deposition rate profiles. The model provides non-measurable information such as local distributions of species concentration and reaction rates, which are valuable for developing optimized CVD reactor designs. Original solutions for the introduction of the reactants are proposed, to uniformly coat complex and/or large parts at a wide temperature range.