Polarization sensitive electronically tuned microgroove array THz active modulator

•Electrically turned semi-metallic based THz modulators with appropriate modulation depth and a wide modulation bandwidth was reported.•We have developed a semi-metallic TiS2 nanofilm device using femtosecond laser direct ablation.•Passive and active polarization-sensitive characterizations of the T...

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Published inResults in physics Vol. 57; p. 107406
Main Authors Song, Qi, Lin, Baichuan, Gao, Feilong, Wang, Yiran, Hou, Shaodong, Zhang, Min, Zhang, Bingyuan, Wang, Minghong
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2024
Elsevier
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Summary:•Electrically turned semi-metallic based THz modulators with appropriate modulation depth and a wide modulation bandwidth was reported.•We have developed a semi-metallic TiS2 nanofilm device using femtosecond laser direct ablation.•Passive and active polarization-sensitive characterizations of the TiS2 nanofilm device in the THz range was realized. The 6G technology has identified the frequency range of 0.1 to 1 THz as the communication band, with a particular focus on ultrafast modulation and multi-dimensional resolution coding technology. To advance the applications of THz photonics, there is a critical need for high-performance active optoelectronic THz devices. One potential solution involves the utilization of electrically controlled semi-metallic based THz modulators, which can provide suitable modulation depth and a wide modulation bandwidth. In this research, a semi-metallic TiS2 nanofilm device was developed using femtosecond laser direct ablation. The combination of structural effects and TiS2 absorption has significantly improved active modulation. These findings indicate that TiS2-based devices are well-suited for applications in THz photonics.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2024.107406