Properties of homo- and hetero-Schottky junctions from first principle calculations

Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of...

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 30; no. 41; pp. 414003 - 414010
Main Authors Greer, James C, Blom, Anders, Ansari, Lida
Format Journal Article
LanguageEnglish
Published England IOP Publishing 17.10.2018
Subjects
calculations
electron transport
electronic structure
quantum confinement
Schottky junction
semimetal
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Summary:Electronic structure calculations for a homo-material semimetal (thick Sn)/semiconductor (thin Sn) heterodimensional junction and two conventional metal (Ag or Pt)/silicon hetero-material junctions are performed. Charge distributions and local density of states are examined to compare the physics of junctions formed by quantum confinement in a homo-material, heterodimensional semimetal junction with that of conventional Schottky hetero-material junctions. Relative contributions to the Schottky barrier heights are described in terms of the interface dipoles arising due to charge transfer at the interface and the effects of metal induced gap states extending into the semiconducting regions. Although the importance of these physical mechanisms vary for the three junctions, a single framework describing the junction energetics captures the behaviors of both the heterodimensional semimetal junction and the more conventional metal/semiconductor junctions.
Bibliography:JPCM-111532.R1
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ISSN:0953-8984
1361-648X
1361-648X
DOI:10.1088/1361-648X/aadbed