Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

• Published in: Results in physics Vol. 16; p. 102839
• Main Authors: Chowdhury, M.S., Shahahmadi, S.A., Chelvanathan, P., Tiong, S.K., Amin, N., Techato, K., Nuthammachot, N., Chowdhury, T., Suklueng, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2020; Elsevier
• Subjects: Defect density; Interface; Perovskite; SCAPS-1D; Solar cell simulation; Solar cell simulation; Perovskite; Defect density; Interface; SCAPS-1D
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2019.102839

•PEDOT:PSS/Perovskite/CdS perovskite planar structure is numerically simulated.•Performance parameters dependency on the absorber defect density and absorber thickness are investigated.•Power conversion efficiency >25% can be achieved when the defect density is <1014 cm−3 and absorber thickness is >400 nm. In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm−3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite’s conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance.