Arguments for electron conduction in silicon nitride

The carrier type conducted in the nitride under + V G has been interpreted as an electron by some and as a hole by others. Under - V G hole conduction is generally accepted. Our I-V data on the Si 3 N 4 dielectric agree with those reported in the literature but we interpret the nitride conduction as...

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Bibliographic Details
Published inIEEE electron device letters Vol. 5; no. 8; pp. 318 - 321
Main Author Yau, L.D.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.1984
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Charge carrier processes
Current measurement
Dielectrics
Electrodes
Electron emission
Electron traps
Electronics
Energy states
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Spontaneous emission
Transistors
Tunneling
Field effect transistor
Conduction
Silicon Nitrides
Electrons
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Summary:The carrier type conducted in the nitride under + V G has been interpreted as an electron by some and as a hole by others. Under - V G hole conduction is generally accepted. Our I-V data on the Si 3 N 4 dielectric agree with those reported in the literature but we interpret the nitride conduction as electron flow for both + V G and - V G . New arguments to support electron conduction are derived from three types of Si 3 N 4 :SiO 2 dual dielectric silicon-gate transistors.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1984.25930