Isothermally crystallized perovskites at room-temperature
The solution processability of photoactive halide perovskites differentiates them from traditional inorganic semiconducting materials that require multiple post-processing steps such as thermal/vacuum/blowing- and solvent-assisted treatment. Here we report a technical breakthrough of isothermally cr...
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Published in | Energy & environmental science Vol. 13; no. 1; pp. 3412 - 3422 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
01.01.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The solution processability of photoactive halide perovskites differentiates them from traditional inorganic semiconducting materials that require multiple post-processing steps such as thermal/vacuum/blowing- and solvent-assisted treatment. Here we report a technical breakthrough of isothermally crystallizing high-quality perovskite films at room-temperature (RT) without the necessity of any post-processing. This process takes advantage of our discovery of a metastable intermediate of lower-dimensionality formed by amine-assisted crystallographic lattice expansion from an initial three-dimensional perovskite. Using
in situ
optoelectrical/chemical and
ex situ
structural characterizations, a detailed understanding of the low-dimensional metastable intermediate is developed. In conjunction with the metastable intermediate, the rapid evaporation of the solvent and amine facilitates ultra-fast crystallization at RT within seconds. This RT rapidly synthesized perovskite film exhibits a carrier diffusion length of 2.9 μm and {00
} preferred orientation with an ultrahigh Lotgering factor of 97%. These films are highly compatible to conventional or inverted devices, demonstrating 22.3% and 23.1% power conversion efficiencies, respectively.
We have developed a paradigm methodology that can isothermally crystallize halide perovskites at room temperature. |
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Bibliography: | Electronic supplementary information (ESI) available. See DOI 10.1039/d0ee01967d |
ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/d0ee01967d |