Improvement of current injection of porous silicon

n-i-p-n hydrogenated amorphous silicon (a-Si:H) layers were deposited onto porous silicon (PS) formed on p-type crystalline silicon (c-Si) by anodization and used to improve the current injection of a PS-based light-emitting diode (LED). The electroluminescence (EL) spectrum for the obtained PS-base...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 36; no. 3B; pp. 1574 - 1577
Main Authors CHEN, Y.-A, LIANG, N.-Y, LAIH, L.-H, TSAY, W.-C, CHANG, M.-N, HONG, J.-W
Format Conference Proceeding Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.03.1997
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Amorphous material
Photoluminescence
Electroluminescence
Silicon
Experimental study
Porous material
Light emitting diode
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Summary:n-i-p-n hydrogenated amorphous silicon (a-Si:H) layers were deposited onto porous silicon (PS) formed on p-type crystalline silicon (c-Si) by anodization and used to improve the current injection of a PS-based light-emitting diode (LED). The electroluminescence (EL) spectrum for the obtained PS-based LED with n-i-p-n a-Si:H layers showed the similar tendency as that of a photoluminescence (PL) signal for an as-anodized PS. The current conduction mechanisms of this PS-based LED were also studied.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.1574