All-semiconductor negative-index plasmonic absorbers

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral...

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Published inPhysical review letters Vol. 112; no. 1; p. 017401
Main Authors Law, S, Roberts, C, Kilpatrick, T, Yu, L, Ribaudo, T, Shaner, E A, Podolskiy, V, Wasserman, D
Format Journal Article
LanguageEnglish
Published United States 10.01.2014
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Summary:We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements.
ISSN:1079-7114
DOI:10.1103/physrevlett.112.017401