Anisotropic effects in the Raman scattering of Re-doped 2H-MoSe2 layered semiconductors

We present the anisotropic Raman spectra of the Re-doped MoSe2 layered semiconductor with thicker edge plane grown by chemical vapor transport method. The anisotropic lattice dynamics in the doped MoSe2 layered material are investigated by Raman scattering. The vibrational spectra measured on the pl...

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Bibliographic Details
Published inResults in physics Vol. 7; pp. 4096 - 4100
Main Authors Wu, Chia-Ti, Hu, Sheng-Yao, Tiong, Kwong-Kau, Lee, Yueh-Chien
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2017
Elsevier
Subjects
Anisotropic
Layered semiconductors
MoSe2
Raman scattering
Layered semiconductors
Anisotropic
Raman scattering
MoSe2
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Summary:We present the anisotropic Raman spectra of the Re-doped MoSe2 layered semiconductor with thicker edge plane grown by chemical vapor transport method. The anisotropic lattice dynamics in the doped MoSe2 layered material are investigated by Raman scattering. The vibrational spectra measured on the planes perpendicular and parallel to the crystal c-axis can be correlated, respectively, to the Raman active E1g, A1g and E2g1 modes. The linewidth parameter Γ and correlation length L evaluated using spatial correlation model for describing the Raman spectra lineshape are further discussed to understand the in-plane and out-of-plane vibration of the Se atoms in the E1g and A1g modes.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2017.10.033