Influence of chemical composition on phase transformation and optoelectronic properties of Cu–Cr–O thin films by reactive magnetron sputtering

Cu–Cr–O films were co-sputtered from Cu and Cr targets on fused silica substrates. Then, these films were annealed at 700°C for 2h under controlled Ar atmosphere. [Cu]/[Cr] ratio was increased from 0.59 to 2.02 by increasing the Cu-target power from 10W to 52W. When the film was prepared at Cu-targe...

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Bibliographic Details
Published inJournal of materials research and technology Vol. 8; no. 1; pp. 690 - 696
Main Authors Tsai, Du-Cheng, Chang, Zue-Chin, Kuo, Bing-Hau, Chen, Chung-Ming, Chen, Erh-Chiang, Shieu, Fuh-Sheng
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.2019
Elsevier
Subjects
Ceramic coating
Coating process
Phase change
Sputtering
Coating process
Ceramic coating
Phase change
Sputtering
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Summary:Cu–Cr–O films were co-sputtered from Cu and Cr targets on fused silica substrates. Then, these films were annealed at 700°C for 2h under controlled Ar atmosphere. [Cu]/[Cr] ratio was increased from 0.59 to 2.02 by increasing the Cu-target power from 10W to 52W. When the film was prepared at Cu-target power of 10W, a pure spinel CuCr2O4 phase was formed in the film. As the Cu-target power increased to 22W, the phase transformed gradually from spinel CuCr2O4 to delafossite CuCrO2. Further increase of Cu-target power resulted in the appearance of an additional monoclinic CuO phase. The [Cu]/[Cr] ratio was approximately 1 at Cu-target power of 22W, which caused the film to exhibit pure delafossite CuCrO2 phase and high crystallinity. Accordingly, optimum electrical conductivity and visible transparency were achieved for the pure CuCrO2 film prepared at Cu-target power of 22W with a figure of merit of 1.51×10−8Ω−1. The formation of the CuO and CuCr2O4 phase was confirmed to deteriorated optoelectronic properties of films.
ISSN:2238-7854
DOI:10.1016/j.jmrt.2018.05.013