Sensitivity of heterointerfaces on emission wavelength of quantum cascade lasers

• Published in: Journal of crystal growth Vol. 464; pp. 215 - 220
• Main Authors: Wang, C.A., Schwarz, B., Siriani, D.F., Connors, M.K., Missaggia, L.J., Calawa, D.R., McNulty, D., Akey, A., Zheng, M.C., Donnelly, J.P., Mansuripur, T.S., Capasso, F.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.04.2017; Elsevier BV
• Subjects: A1. Interfaces; A1. Segregation; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-V materials; B3. Infrared devices; Band structure; Band structure of solids; Correlation analysis; Emission; Epitaxial growth; Etching; Indium; Lasers; Metalorganic chemical vapor deposition; Quantum cascade lasers; Temperature; Vapor phase epitaxy; Wavelengths; A3. Quantum wells; A1. Segregation; A3. Metalorganic vapor phase epitaxy; A1. Interfaces; B2. Semiconducting III-V materials; B3. Infrared devices
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2016.11.029

The measured emission wavelengths of AlInAs/GaInAs/InP quantum cascade lasers (QCLs) grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be ~ 0.5–1µm longer than the designed QCL wavelength. This work clarifies the origin of the red-shifted wavelength. It was found that AlInAs/GaInAs heterointerfaces are compositionally graded over ~ 2.5–4.5nm, and indium accumulates at the AlInAs-to-GaInAs interface. Thus, the as-grown QCLs are far from the ideal abrupt interfaces used in QCL modeling. When graded layers are incorporated in QCL band structure and wavefunction calculations, the emission wavelengths are red shifted. Furthermore, we demonstrate that QCLs with graded interfaces can be designed without compromising performance and show greatly improved correlation between designed and measured emission wavelength. QCLs were designed for emission between 7.5 and 8.5µm. These structures were grown and wet-etched ridge devices were fabricated. The QCLs exhibit room temperature peak powers exceeding 900mW and pulsed efficiencies of ~8 to 10%. •AlInAs/GaInAs heterointerfaces are compositionally graded.•Indium surface segregation is mainly responsible for compositional grading.•Segregation is evidenced by ex-situ and in-situ characterization.•Grading in quantum cascade lasers leads to red-shifted emission wavelengths.