Shift in threshold voltage and Schottky barrier height of molybdenum gate gallium arsenide field effect transistors after high forward gate current test

The threshold voltage and the Schottky barrier height of InGaAs/AlGaAs HEMTs or GaAs MESFETs with molybdenum Schottky gates were observed to shift after high forward gate current tests, and the shift was recovered by subsequent heat treatment. Experimental results show that this phenomenon is charac...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 35; no. 7B; pp. L883 - L886
Main Authors KIMURA, T, SHIGEMASA, R, OHSHIMA, T, NISHI, S
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 15.07.1996
Subjects
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
Voltage threshold
Binary compound
Electric stress
Transistor gate
Experimental study
Molybdenum
III-V compound
Gallium Arsenides
Electron irradiation
Titanium
Diffusion barrier
Barrier height
Reliability
Metal semiconductor field effect transistor
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Summary:The threshold voltage and the Schottky barrier height of InGaAs/AlGaAs HEMTs or GaAs MESFETs with molybdenum Schottky gates were observed to shift after high forward gate current tests, and the shift was recovered by subsequent heat treatment. Experimental results show that this phenomenon is characteristic of molybdenum Schottky gates on GaAs, and it is related to the deep traps near the interface between molybdenum and GaAs or within the GaAs channel layer. Such deep traps were introduced due to the electron irradiation effect during the electron beam deposition of the molybdenum (Mo) on GaAs. Insertion of a thin Ti layer between Mo and GaAs was found to be effective for suppressing the shift.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.l883