Observation of waveguide Fabry-Perot lasing in highly efficient Si nanocrystals

•A luminescent Si nanocrystal film with photoluminescence quantum yield > 70% was prepared by hydrogen sesquioxane (HSQ) and high-pressure hydrogenation.•This work demonstrates a waveguide Fabry-Perot lasing in such Si nanocrystals by observing the lasing characteristics of threshold behavior, sp...

Full description

Saved in:
Bibliographic Details
Published inResults in physics Vol. 34; p. 105336
Main Authors Yu, Zhi-Yuan, Guo, Zhi-He, Zhang, Yu-Chen, Zhang, Xun, Wang, Yan, Ma, Feng-Yang, Liu, Yu, Xue, Xia-Yan, Jin, Qing-Yuan, Li, Jing, Sun, Jian, Wang, Song-You, Wang, Dong-Chen, Lu, Ming
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2022
Elsevier
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:•A luminescent Si nanocrystal film with photoluminescence quantum yield > 70% was prepared by hydrogen sesquioxane (HSQ) and high-pressure hydrogenation.•This work demonstrates a waveguide Fabry-Perot lasing in such Si nanocrystals by observing the lasing characteristics of threshold behavior, spectral narrowing, polarization effect and small emission angle. A luminescent Si nanocrystal (SiNC) thin film with photoluminescence quantum yield (PLQY) > 70% was made by using hydrogen silsesquioxane (HSQ), followed by long-time high-pressure hydrogenation. A net optical gain of 524 ± 21 cm−1 was obtained by means of variable stripe length-shifting excitation spot (VSL-SES). A rectangularly shaped SiO2 Fabry-Perot (F-P) cavity with size of 1.5 μm (width) × 0.7 μm (height) × 2000 μm (length) was made on top of the SiNC thin film. The waveguide F-P device was pumped with a 400 nm femtosecond pulsed laser. A threshold behavior of the light emission intensity as a function of the pumping power was observed. Other lasing characteristics including spectral narrowing, polarization of the emission, and small emission angle were also observed beyond the threshold pumping power.
ISSN:2211-3797
2211-3797
DOI:10.1016/j.rinp.2022.105336