Clear negative characteristics observed in coupled-quantum-well base resonant tunneling transistors

Clear negative resistance characteristics observed in a resonant tunneling transistor with a coupled-quantum-well (CQW) base are reported. The collector current reveals negative resistance properties with respect not only to the base-emitter voltage but also the base current in the common-emitter co...

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Bibliographic Details
Published inIEEE electron device letters Vol. 14; no. 4; pp. 202 - 204
Main Authors Waho, T., Maezawa, K., Mizutani, T.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.04.1993
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Contact resistance
Electronics
Epitaxial layers
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Ohmic contacts
Quantum well devices
Quantum wells
Resonant tunneling devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transconductance
Transistors
Voltage
Transistor base
Resonant tunnel effect
Operation study
Quantum well
Negative differential conductivity
Transistor
Electrical characteristic
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Summary:Clear negative resistance characteristics observed in a resonant tunneling transistor with a coupled-quantum-well (CQW) base are reported. The collector current reveals negative resistance properties with respect not only to the base-emitter voltage but also the base current in the common-emitter configuration. The collector current peak-to-valley ratio is enhanced in the CQW-base transistor compared with a reference transistor with a single-quantum-well (SQW) base.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215150