Fabrication of InGaAs quantum wires and dots by selective molecular beam epitaxial growth on various mesa-patterned (001)InP substrates

• Published in: Japanese Journal of Applied Physics Vol. 36; no. 3B; pp. 1763 - 1769
• Main Authors: ARAKI, M, HANADA, Y, FUJIKURA, H, HASEGAWA, H
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.03.1997
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Aluminium arsenides; Quantum wires; Gallium arsenides; Inorganic compounds; Semiconductor materials; Quantum dots; Ternary compounds; Crystal growth from vapors; Experimental study; Indium arsenides; Faceting; Characterization; Selective growth; Molecular beam epitaxy; MESA technology
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.1763

Systematic growth experiments were undertaken for the successful formation of InGaAs/InAlAs quantum wires and dots on patterned InP substrates by selective molecular beam epitaxy (MBE). Multi layer test structures consisting of InGaAs and InAlAs alternate layers were formed on 7 different types of mesa patterns including stripe- and square-shaped mesas oriented along the [110], [110] and [100] directions. The growth led to the formation of sidewalls consisting of a variety of facets. Although these sidewalls were often rough or not uniform, the growth on the stripe-mesas along the [110] and [100] directions, and the growth on the square-mesas with (201) sidewall facets were found to be promising since they resulted in very smooth sidewall facets, cross-sectional and lateral uniformity, and good growth selectivity. Using these results, InGaAs quantum wires and dots were successfully formed.