Chaos in the discrete memristor-based system with fractional-order difference

• Published in: Results in physics Vol. 24; p. 104106
• Main Authors: Peng, Yuexi, He, Shaobo, Sun, Kehui
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2021; Elsevier
• Subjects: Chaotic map; Coexisting attractors; Complexity; Discrete memristor; Fractional-order difference; Discrete memristor; Fractional-order difference; Chaotic map; Coexisting attractors; Complexity
• ISSN: 2211-3797; 2211-3797
• DOI: 10.1016/j.rinp.2021.104106

The mathematical modeling of memristor in discrete-time domain is an attractive new issue, but there are still some problems to be explored. This paper studies an interesting second-order memristor-based map model, and the model is constructed to three systems based on Caputo fractional-order difference. Their dynamic behaviors are investigated by the volt–ampere curve, bifurcation diagram, maximum Lyapunov exponent, attractor phase diagram, complexity analysis and basin of attraction. Numerical simulation analysis shows that the fractional-order system exhibits quasi periodic, chaos, coexisting attractors and other complex behaviors, which demonstrates more abundant dynamic behaviors of the fractional-order form. It lays a good foundation for the future analysis or engineering application of the discrete memristor. •The fractional-order difference is introduced to the discrete memristor map.•Three types of fractional-order memristor systems are designed according to the position of the fractional-order difference.•Complex dynamics including coexisting attractor are analyzed.