Comprehensive physical modeling of nmosfet hot-carrier-induced degradation

The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7μm CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all s...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 36; no. 11-12; pp. 1667 - 1670
Main Authors Lunenborg, M.M., De Graaff, H.C., Mouthaan, A.J., Verweij Mesa, J.F.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.11.1996
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
MOS technology
Physical model
Integrated circuit
Hot carrier
Experimental study
Reliability
Failures
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Summary:The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7μm CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ΔID Δgm etc.).
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ISSN:0026-2714
1872-941X
DOI:10.1016/0026-2714(96)00170-9