Giant Electrostriction in Gd-Doped Ceria

Gd‐doped CeO2 exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium‐oxygen vacancy pairs. This mechanism is fundamentally different from that of materials...

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Published inAdvanced materials (Weinheim) Vol. 24; no. 43; pp. 5857 - 5861
Main Authors Korobko, Roman, Patlolla, Anitha, Kossoy, Anna, Wachtel, Ellen, Tuller, Harry L., Frenkel, Anatoly I., Lubomirsky, Igor
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 14.11.2012
WILEY‐VCH Verlag
Subjects
Cerium - chemistry
doped ceria
Electric Conductivity
Electrodes
electrostriction
Gadolinium - chemistry
Ions - chemistry
Oxygen - chemistry
point defects
X-Ray Absorption Spectroscopy
XANES
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Summary:Gd‐doped CeO2 exhibits an anomalously large electrostriction effect generating stress that can reach 500 MPa. In situ XANES measurements indicate that the stress develops in response to the rearrangement of cerium‐oxygen vacancy pairs. This mechanism is fundamentally different from that of materials currently in use and suggests that Gd‐doped ceria is a representative of a new family of high‐performance electromechanical materials.
Bibliography:ArticleID:ADMA201202270
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ark:/67375/WNG-1BHBLRFK-R
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
BNL-106576-2014-JA
DE-AC02-98CH10886
USDOE SC OFFICE OF SCIENCE (SC)
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201202270