Electrical control of the exciton-biexciton splitting in self-assembled InGaAs quantum dots

The authors demonstrate how lateral electric fields can be used to precisely control the exciton-biexciton splitting in InGaAs quantum dots. By defining split-gate electrodes on the sample surface, optical studies show how the exciton transition can be tuned into resonance with the biexciton by expl...

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Published inNanotechnology Vol. 22; no. 32; pp. 325202 - 1-4
Main Authors Kaniber, M, Huck, M F, Müller, K, Clark, E C, Troiani, F, Bichler, M, Krenner, H J, Finley, J J
Format Journal Article
LanguageEnglish
Published England 12.08.2011
Subjects
Dominance
Electrodes
Excitation
Fine structure
Indium gallium arsenides
Quantum dots
Splitting
Tuning
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Summary:The authors demonstrate how lateral electric fields can be used to precisely control the exciton-biexciton splitting in InGaAs quantum dots. By defining split-gate electrodes on the sample surface, optical studies show how the exciton transition can be tuned into resonance with the biexciton by exploiting the characteristically dissimilar DC Stark shifts. The results are compared to model calculations of the relative energies of the exciton and biexciton, demonstrating that the tuning can be traced to a dominance of hole-hole repulsion in the presence of a lateral field. Cascaded decay of the exciton-biexciton system enables the generation of entangled photon pairs without the need to suppress the fine structure splitting of the exciton. Our results demonstrate how the exciton-biexciton system can be electrically controlled.
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/32/325202