Light–valley interactions in 2D semiconductors
The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties an...
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| Published in | Nature photonics Vol. 12; no. 8; pp. 451 - 460 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
01.08.2018
Nature Publishing Group |
| Subjects | |
| Online Access | Get full text |
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| Abstract | The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties and their experimental demonstrations in single-layer semiconductor TMDs with an emphasis on the effects of band topology and light–valley interactions. We also provide a brief summary of the recent advances on controlling the valley degree of freedom in TMDs with light and other means for potential applications.
Valleytronics in single-layer semiconductors is reviewed with an emphasis on controlling the valley degree of freedom with light as well as potential applications. |
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| AbstractList | The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties and their experimental demonstrations in single-layer semiconductor TMDs with an emphasis on the effects of band topology and light–valley interactions. We also provide a brief summary of the recent advances on controlling the valley degree of freedom in TMDs with light and other means for potential applications.
Valleytronics in single-layer semiconductors is reviewed with an emphasis on controlling the valley degree of freedom with light as well as potential applications. The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties and their experimental demonstrations in single-layer semiconductor TMDs with an emphasis on the effects of band topology and light–valley interactions. We also provide a brief summary of the recent advances on controlling the valley degree of freedom in TMDs with light and other means for potential applications. Not provided. |
| Author | Xiao, Di Mak, Kin Fai Shan, Jie |
| Author_xml | – sequence: 1 givenname: Kin Fai surname: Mak fullname: Mak, Kin Fai email: kinfai.mak@cornell.edu organization: Department of Physics and School of Applied and Engineering Physics, Cornell University, Kavli Institute at Cornell for Nanoscale Science – sequence: 2 givenname: Di surname: Xiao fullname: Xiao, Di email: dixiao@cmu.edu organization: Department of Physics, Carnegie Mellon University – sequence: 3 givenname: Jie surname: Shan fullname: Shan, Jie email: jie.shan@cornell.edu organization: Department of Physics and School of Applied and Engineering Physics, Cornell University, Kavli Institute at Cornell for Nanoscale Science |
| BackLink | https://www.osti.gov/biblio/1539841$$D View this record in Osti.gov |
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| Snippet | The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which... Not provided. |
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| Title | Light–valley interactions in 2D semiconductors |
| URI | https://link.springer.com/article/10.1038/s41566-018-0204-6 https://www.proquest.com/docview/2077457238 https://www.osti.gov/biblio/1539841 |
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