Light–valley interactions in 2D semiconductors

The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties an...

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Bibliographic Details
Published inNature photonics Vol. 12; no. 8; pp. 451 - 460
Main Authors Mak, Kin Fai, Xiao, Di, Shan, Jie
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.08.2018
Nature Publishing Group
Subjects
639/301/357
639/766/1130
639/925/357
Applied and Technical Physics
Degrees of freedom
Information processing
Information storage
Optics
Physics
Physics and Astronomy
Quantum Physics
Review Article
Topology
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Summary:The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties and their experimental demonstrations in single-layer semiconductor TMDs with an emphasis on the effects of band topology and light–valley interactions. We also provide a brief summary of the recent advances on controlling the valley degree of freedom in TMDs with light and other means for potential applications. Valleytronics in single-layer semiconductors is reviewed with an emphasis on controlling the valley degree of freedom with light as well as potential applications.
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SourceType-Scholarly Journals-1
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ObjectType-Literature Review-2
USDOE Office of Science (SC)
SC0012509; SC0013883
ISSN:1749-4885
1749-4893
DOI:10.1038/s41566-018-0204-6