Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure

A simple thermal annealing at 150 °C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual ads...

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 33; no. 4; pp. 4 - 8
Main Authors Bridoux, G, Ruano, G D, Ferreyra, J M, Villafuerte, M
Format Journal Article
LanguageEnglish
Published England IOP Publishing 01.12.2020
Subjects
band bending
photoconductivity
semiconductors
photoconductivity
semiconductors
band bending
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Summary:A simple thermal annealing at 150 °C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a release of carriers from bulk traps while the second is caused by a gradual adsorption of species on the film surface which increases the band bending, as x-ray photoemission spectroscopy (XPS) shows. An observed drift of the photoconductivity and the energy gap over the days is connected to this adsorption kinetics. These findings have a potential application in ZnO based optoelectronic devices.
Bibliography:JPCM-117230.R1
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ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/abc359