Effect of A- or B-Site Sc Doping on Sintering Temperature, Crystal Structure, Microstructure, and Properties of BaZrxTi1−xO3 Ceramics
BaZrxTi1−xO3 (BZT) ceramics with different concentrations of Sc ions were prepared, and the effect of doping concentration on the crystal substitution type of BZT was studied. The substitution position of the Sc ion in BZT was related to its concentration. When the concentration of Sc ions was low (...
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Published in | Materials Vol. 16; no. 20; p. 6635 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
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MDPI AG
11.10.2023
MDPI |
Subjects | |
Online Access | Get full text |
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Summary: | BaZrxTi1−xO3 (BZT) ceramics with different concentrations of Sc ions were prepared, and the effect of doping concentration on the crystal substitution type of BZT was studied. The substitution position of the Sc ion in BZT was related to its concentration. When the concentration of Sc ions was low (<1.0 mol %), it showed B-site substitution; otherwise, Sc ions showed A-site substitution. In addition, the effects of the Sc ion concentration on the sintering temperature, crystal structure, microstructure, and properties of BZT were also studied. The results showed that the introduction of Sc ions can reduce the sintering temperature to 1250 °C. When the concentration of Sc ions was 1.0 mol % and 2.0 mol %, the high dielectric constants of BZT were 14,273 and 12,747, respectively. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma16206635 |