Influence of Accidental Impurities on the Spectroscopic and Luminescent Properties of ZnWO4 Crystal

Special techniques for deep purification of ZnO and WO3 have been developed in this work. A ZnWO4 single crystal has been grown by the Czochralski method using purified ZnO and WO3 chemicals, along with the ZnWO4 crystal-etalon, which has been grown at the same conditions using commercially availabl...

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Published inMaterials Vol. 16; no. 7; p. 2611
Main Authors Subbotin, Kirill, Titov, Anatolii, Solomatina, Victoria, Khomyakov, Andrew, Pakina, Ekaterina, Yakovlev, Viktor, Valiev, Damir, Zykova, Marina, Kuleshova, Kristina, Didenko, Yana, Lis, Denis, Grishechkin, Mikhail, Batygov, Sergei, Kuznetsov, Sergei, Avetissov, Igor
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 25.03.2023
MDPI
Subjects
Absorption spectra
Ammonia
Annealing
Aqueous solutions
cathodoluminecense
Cathodoluminescence
Chemicals
Crystal growth
Czochralski method
Etalons
Excitation spectra
Impurities
Inductively coupled plasma mass spectrometry
Optical properties
photoluminecense
Photoluminescence
pure substance
Single crystals
Zinc oxide
zinc tungstate
Zinc tungstates
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Summary:Special techniques for deep purification of ZnO and WO3 have been developed in this work. A ZnWO4 single crystal has been grown by the Czochralski method using purified ZnO and WO3 chemicals, along with the ZnWO4 crystal-etalon, which has been grown at the same conditions using commercially available 5N ZnO and WO3 chemicals. The actual accidental impurities compositions of both the initial chemicals and the grown crystals have been measured by inductively coupled plasma mass-spectrometry. A complex of comparative spectroscopic studies of the crystals has been performed, including optical absorption spectra, photo-, X-ray-, and cathodoluminescence spectra and decay kinetics, as well as the photoluminescence excitation spectra. The revealed differences in the measured properties of the crystals have been analyzed in terms of influence of the accidental impurities on these properties.
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content type line 23
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16072611