Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si

• Published in: Thin solid films Vol. 428; no. 1-2; pp. 190 - 194
• Main Authors: RENAULT, O, SAMOUR, D, ROUCHON, D, HOLLIGER, Ph, PAPON, A.-M, BLIN, D, MARTHON, S
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier Science 20.03.2003
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Ultrathin films; Crystal growth; Atomic layer method; Inorganic compounds; Angular resolution; Hafnium oxides; Dielectric materials; Transition element compounds; Oxides; Solid-solid interfaces; Experimental study; Depth profiling; High-resolution methods; AES; Characterization; Interface properties; Transmission electron microscopy; High-k dielectrics; Depth profiles; X-ray photoelectron spectroscopy; X-ray photoelectron spectra
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/s0040-6090(02)01198-7

Ultra-thin (1-8 nm) HfO2 films, grown on both chemical and thermal SiO2/Si surfaces by atomic layer deposition, were characterized in terms of interface properties by ARXPS, HRTEM and depth profiling techniques such as SIMS and AES. ARXPS measurements show, in excellent agreement with HRTEM, that the SiO2 thickness increases upon HfO2 deposition, possibly in part as the result of interfacial reactions forming silicates-type bonding states that are evidenced from careful deconvolution of both Hf 4f and Si 2p core-level spectra. SIMS and AES depth profiles exhibit a redistribution of oxidized Hf concentration in the SiO2 interfacial layer, and also a possible diffusion of Hf into the Si substrate. These results are useful for further understanding of HfO2/SiO2 interfaces for the next generation of complementary metal-oxide-semiconductor transistor oxide gates. 6 refs.