Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors

Accurate device models and parameter extraction methods are of utmost importance for characterizing graphene FETs (GFETs) and for predicting their performance in circuit applications. For dc characterization, accurate extraction of mobility and series resistance is of particular concern. In this art...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 68; no. 6; pp. 3091 - 3095
Main Authors Jeppson, Kjell, Asad, Muhammad, Stake, Jan
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Carrier density
Charge carrier mobility
Charge density
Chemical vapor deposition
Circuits
Current carriers
Degradation
Extraction procedures
Field effect transistors
Graphene
graphene FETs (GFETs)
graphene field-effect transistors
Integrated circuit modeling
Logic gates
Mathematical model
mobility degradation
Performance prediction
Resistance
Scattering
Semiconductor devices
series resistance
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Summary:Accurate device models and parameter extraction methods are of utmost importance for characterizing graphene FETs (GFETs) and for predicting their performance in circuit applications. For dc characterization, accurate extraction of mobility and series resistance is of particular concern. In this article, we show how a first-order mobility degradation model can be used to separate information about mobility degradation and series resistance for a set of GFETs of different channel lengths. Data from a large set of top-gated GFETs based on chemical vapor deposited (CVD) graphene was analyzed to validate the proposed model and extraction procedures. For removing any uncertainties caused by the observed device-to-device data variations due to the uneven quality of CVD graphene, the same methods were applied to a set of closely located bottom-gated GFETs found in literature. Those GFETs were designed for transfer length methods and fabricated on exfoliated graphene of homogeneous quality. Similar mobility degradation behavior was observed for both sets of devices with the mobility being reduced to half for a voltage-induced charge carrier density of 10 13 cm −2 .
ISSN:0018-9383
1557-9646
1557-9646
DOI:10.1109/TED.2021.3074479