Electronic transport and noise in ballistic n+–n–n+ semiconductor nanodiodes

We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n(+)-n-n(+) semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account th...

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Bibliographic Details
Published inNanotechnology Vol. 14; no. 2; pp. 172 - 176
Main Authors Gomila, G, Cantalapiedra, I R
Format Journal Article Conference Proceeding
LanguageEnglish
Published Bristol IOP Publishing 01.02.2003
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor diode
Transport properties
Ballistic transport
Voltage current curve
Noise
Nanoelectronics
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Summary:We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n(+)-n-n(+) semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current-voltage characteristics calculated from the present theory agree perfectly with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/14/2/314