Effect of hydrogen in the gate insulator on the bottom gate oxide TFT

• Published in: Journal of Information Display Vol. 11; no. 3; pp. 113 - 118
• Main Authors: Park, Sang-Hee Ko, Ryu, Minki, Yang, Shinhyuk, Yoon, Sung Min, Hwang, Chi-Sun
• Format: Journal Article
• Language: English
• Published: Taylor & Francis Group 01.09.2010; 한국정보디스플레이학회
• Subjects: H effect; NBIS; NBS; Oxide TFT; PBS; 전기공학
• ISSN: 1598-0316; 2158-1606
• DOI: 10.1080/15980316.2010.9656256

The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in V th instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.