A simple general analytical solution for the quantum efficiency of front-surface-field solar cells

• Published in: Solar energy materials and solar cells Vol. 43; no. 4; pp. 363 - 376
• Main Authors: Dai, X.M., Tang, Y.H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.1996
• Subjects: Electrooptical effects; Energy gap; Optimization; Quantum efficiency; Semiconductor device models; Semiconductor junctions; Semiconductors device models; Short circuit currents; Solar cells; Thin films; Solar cells; Semiconductors device models; Short-circuit currents; Semiconductor junctions
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/0927-0248(96)00020-7

The optimisation of a FSF solar cell or a BSF thin film solar cell necessitates an understanding of the characteristics of an illuminated high-low junction. However, except for minority carrier reflection, the photocurrent collection property of the light-generated carriers in the high region by a high-low junction has rarely been treated previously. It is the purpose of this paper to present a simple solution for the contribution of the light-generated current from the high region. The model shows that a high-low junction may be very efficient in light-generated current collection, and this property is primarily responsible for the increase of the short wavelength quantum efficiency using a FSF. The effects of the FSF layer doping concentration and its thickness on the quantum efficiency are discussed by using the computed results; the optimisation of the FSF is then made. The calculations take into account the high doping effects of degeneracy and bandgap narrowing.