Growth mechanism of primary silicon in cast hypoeutectic Al-Si alloys

• Published in: Transactions of Nonferrous Metals Society of China Vol. 22; no. 6; pp. 1264 - 1269
• Main Authors: WANG, Shou-ren, MA, Ru, WANG, Ying-zi, WANG, Yong, YANG, Li-ying
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2012
• Subjects: Al-Si alloys; Alloys; Aluminum base alloys; Concentration (composition); crystal growth; Intermetallic compounds; Mathematical analysis; Nucleation; Optical microscopy; Precipitation; primary silicon; Silicon; solidification; solute redistribution; crystal growth; primary silicon; Al-Si alloys; solidification; solute redistribution
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(11)61314-9

The microstructural features of hypoeutectic Al-10%Si alloy were observed using optical microscopy and electron backscatter diffraction. The results show that primary silicon particles are frequently found in hypoeutectic alloys. Hence, the nucleation and growth mechanisms of the precipitation of primary silicon of hypoeutectic Al-10%Si alloy melts were investigated. It was discovered that Si atoms are easy to segregate and form Si-Si clusters, which results in the formation of primary silicon even in eutectic or hypoeutectic Al-Si alloys. In addition, solute redistribution caused by chemical driving force and large pile-ups or micro-segregation of the solute play an important role in the formation of the primary silicon, and the solute redistribution equations were derived from Jackson-Chalmers equations. Once Si solute concentration exceeds eutectic composition, primary silicon precipitates are formed at the front of solid/liquid interface.